Development of Broadband Low-voltage Rf Mem Switches
نویسندگان
چکیده
We present novel RF switches using micro-electromechanical (MEM) technology. These MEM switches are built on GaAs substrates using GaAs MESFET MMICcompatible processes. The fabricated shunt switches showed an insertion loss of less than 0.2dB and an isolation of greater than 20dB up to 40GHz. The switching speed is 47μS. The broadband MEM switches are promising building blocks for wideband circuits and reconfigurable antenna applications.
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